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polycrystalline silicon carbide crusher

This paper presents a study of the rectifying properties of heavily doped polycrystalline silicon (polysilicon) on 4H silicon carbide (4H-SiC). Current properties and barrier heights were found using analysis of the heterojunction. This revealed that Schottky analysis would be valid for the large barrier height devices. Isotype and an-isotype devices were fabricated on both p-type and n-type

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